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ocr_text: Combining MBE & MOCVD\n» AlGaN/GaN HEMTs on Si\nOne of the challenges is the vertical voltage-blocking capability of the GaN-on-Si epitaxial stack\nwhich limits the maximum voltage operation.\nmmm) Vertical buffer current is correlated to charge injection from the Si substrate\n--> a parasitic channel forming between the AIN nucleation and the Si.\n» Suppression of the formation of this channel --> / AIN growth temperature Limit in MOCVD\nSSrowth due to severe material quality degradation.\n» Hybrid growth approach\nmmm) Combining the use of MBE AIN nucleation layer @ LT with a MOCVD HEMT structure.\n[=]\n>\nQ\n400 nm\nw Coll. CRHEA — Aachen Univ. & Magdeburg Univ.\n= [H. Yacoub et al., Phys. Status Solidi A, 170063¢ FONE = 2 iis
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