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ocr_text: » Main difficulties:\n- the “melt-back etching” --> reaction between Ga & Si at high temperature\nIf Ga comes into contact with Si during g PR _\nmelt-back etching which generates PI 4 /\nlarge defects in the GaN structures. i Sicon\nFIG. 4.2 Melt-back etching in silicon, with Nomarski image (bottom right), and etched hole in\nAN silicon as shown in the SEM images (ft and top right). The colored lines show the outlines of\nthe defects that are shown in the optical microscope image\nChapter 4 — III-N Epitaxy on Si for Power Electronics\nM. Charles, Y. Baines, E. Morvan and A. Torres.\nHigh Mobility Materials for CMOS Applications. oo
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