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ocr_text: Si-based technology\n> Why Si?\nSilicon: abundant (2nd element (28%) after oxygen (46%)), cheap and simple purification process:\nReduction:\nSilicon dioxide (SiO) is reduced (@ 1500-2000 °C) : SiO, + C — Si + CO,\n===) Si is metallurgical grade silicon (MG-Si) 98-99% pure.\nPresence of transition metals --> deep levels in the bandgap with high recombination activity -->\nunsuitable for use in electronics https://www.pveducation.org/pvedrom/\nPurification in 2 steps: manufacturing-si-cells/refining-silicon\n- MG-Si is reacted with anhydrous HCl (@ 300 °C) to form SiHCl5: Si + 3HCI — SiHCl; + H\n- SiHCl; is reacted with hydrogen (@ 1100°C) to produce a very pure Si : SiHCI3 + H; — Si + 3 HCI\nReaction inside large vacuum chambers & the Si is deposited onto thin polysilicon rods to produce\nhigh-purity |\nThe resulting rods of semiconductor grade silicon are\ncrystallisation process. £3\n- Czochralski (CZ) process (Crystal pulling)\n- Floating zone (FZ) process a | _\nMelting of Introduction Beginning of - -_Crysigl =fpmed oral
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