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ocr_text: Heterogeneous Material Integration on Si Platforms\n—————————————————————————— Blanket layer growth\n>Key challenge --> elimination of the Strain relaxed buffer ayer? Direct wafer bonding quental 3D integration\ndislocations formed when Ge or III-V\nmaterials are grown on Si. = a —, —\n===) A variety of techniques includes: = =\n- compositional grading, —\n- wafer bonding Selective area growth\n4 VLS growth Aspectratio trapping | (Template-assisted selective epitax\n- selective area growth, [rev—.\n- aspect ratio trapping, - Ln\n- cyclic annealing. [D. Caimi et al., ——|\nSolid-State Electronics\n185, 108077 (2021)]\nFi. 1. Various approaches tha have been explored t teat I-V mateials on Si substrates.\n» Patterned selective-area-growth (SAG) methods provide a direct and potentially more\nflexible means to directly integrate disparate materials if defectivity can be managed.\n» Selective area epitaxy is a local growth through a patterned amorphous dielectric mask\n(typically SiO, or Si3N4) deposited on a semiconductor substrate. Semiconductor growth conditions\nare selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask.
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