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ocr_text: Heterogeneous Material Integration on Si Platforms\n» Integrate (onto Si) heterogeneous devices with CMOS transistors\n#vtpoduction of materials with specific properties\n» Semiconductor materials chosen for Graphene h foo\ne.g. InP, InGaAs, GaAs and GaN develd 1 I forsrtr-2)\nanalog RF applications > H TTS bead E\nReplacement of the Si channel of the"MOSFET H 18402 oWse2, a\n- Use of strained Si | Coes at\n- Use of SiGe technology characterized by 1600\n_ ~ : a higher mobility 01 1 10\nUse of a III-V material Energy band gap (eV)\nFIG. 2.8 Comparison of clectronhole carrier mobilitis and energy bandgaps of selected semi\nwith switching speeds suitable for fast electronics. Blue box: lowebl, eho i\nfor significantly faster than silicon switching, low-voltage operations. aid wide-spectrum optoclec
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