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ocr_text: Polarization in a AlIGaN/GaN Heterostructure\n> Total polarization (P = Ps, +Py;) Tensile strain\nHeterostructure “Cpa bar\nDifferent tota) polarization c AlGaN barrier =)\nCharge densities at the interface GaN\nJ GaN channel channel\nInternal electric field\nCo nducti — i i\nUF = AP= (Poa-Pens)/ 60 = 0 £5 iw fon Growth direction\nBand structure bending fermi | Undoped Gan\nmmm) HEMT heterostructure: level | AlGaN\nA cladding barrier (larger gap than GaN) p\nis grown on the GaN channel cc | > 2DEG\nAt the AlGaN N interface: polarizati\ntt e AlGaN/Ga inter ace: po arization N =) formation of a triangular QW\ndifference and conduction band discontinuity > 2D electron gaz (2DEG)
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