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ocr_text: Perspectives & Challenges\n» Monolithic integration of III-V SC on Si attracts a lot of interest to benefit from the\nsuperior electron mobility / high saturation velocity / high temperature / high power\n» Important improvements & achievements with demonstration of fully integrated III-V\ndevices on 300 mm Si substrates in a VLSI compatible flow [N. Waldron et al., Solid-State\ni Ell 115, 81 (2016)\nRE Gate All Around cctrontes zoel\n< direct optical band gap offers the of i p Sy Nanowires\npossibility to integrate light sources on Food 4 Vv E oom a\nSi for optical interconnections fl\n> Challenges still exist: Buffer ™ SAE i\n===) Control of the defects in heteroepi AY s QO)\nvolume, compatible with Si CMOS dev So 2\n> In the longer term, new beyond-CMO< Ell ik oe\nfurther to the material palette for heteroycucity anu new nanusyswens.
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