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created_time: 2025-11-28T16:58:22.121Z
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ocr_text: Integration of devices on a Si CMOS platform\n» Demonstration of a GaAs MOSFET on silicon using ART.\n===) The transfer characteristics showed a peak mobility of 503 cm2/Vs, which was\nsimilar to the value seen on a GaAs MOSFET made on a bulk GaAs substrate using the\nsame MOSFET fabrication process, and which exceeds the silicon universal mobility\ncurve.\nCMP surface § wl\n= Ge EK)\nTew Si 00 02 04 08 08 10\n(a) (b)\n[Y.Q. Wu et al., Appl. Phys. Lett. 93,\nFigure 12. (a) XSEM of the epitaxial structure and (b) output characteristics of a GaAs 242106, 008)\nMOSFET fabricated on silicon using ART. - SEF ZT
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