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created_time: 2025-11-28T16:58:23.304Z
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ocr_text: Design of the Heterostructure\n» Integration of layers to control the strain:\n===) To grow crack-free GaN layers on Si, it is necessary to maintain a certain amount of\ncompressive strain in GaN in order to compensate for the tensile strain appearing during the post\ngrowth cooling from the growth temperature to room temperature.\nGrowth under compressive\nSilicon substrate Hegde AlN orowth strain --> low Al content\n= = Layers on high Al content\nones\nWafer becomes flat l to prevent cracking, growth\n20 cooling fo room ace lg Buffer growth of GaN must be 2D, which\nA— —— under compressio also means that the surface\nEE = morphology of the initial\n— = — = AIN or AlGaN buffer layer\nneeds to be as smooth as\nFIG. 4.4 Schematic of basic GaN-on-silicon growth. possible.
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