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ocr_text: Metal-Oxide semiconductor FET (MOSFET)\n» Depletion mode and enhancement mode are two major transistor types:\n- depletion = transistor in a normally-ON state + at zero gate-source voltage\n- enhancement = transistor in a normally-OFF state 9 9\n» MOS Transistor main elements & process:\n1. oxidation of the silicon substrate (field oxide) + etching part of the SiO, ;\n2. formation of a thin oxide layer (gate oxide-thermal oxidation) + deposition of poly Si (by CVD);\n3. etching+doping (implantation) of Si = creation of the source & drain junctions (self-aligned proc.);\n4. insulating layer of SiO, (by CVD) + etching (contact windows for source & drain) ;\n5. deposition of the metal contact (Al) ; > CMOS technology: complementary MOS\npoly; me technology using both N and P channel devices\nsource drain = =\nSi - substrate - — —
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