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ocr_text: InGaAs-based channel FinFET\n» Initiation of the growth on the Si {111} planes and use of an InP buffer layer.\n» Steps of chemical mechanical polishing (CMP) / chemical etching for InP recess.\n===) Growth of the Ing s3;Ga.47As channel layer --> the depth of the InP recess determines\nthe thickness/height of the InGaAs channel. [N. Waldron et al., Solid-State Electronics 115, 81 (2016)]\n<s The STI oxide is recessed and then follows a typical Si Fin. Cp\nInGaAs Buffer\n1 Highkimetal ge dep
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