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ocr_text: Transistor: Advantages & Challenges\nTransistor Advantages Challenges\nFiFET Mainstream CMOS Scalability\nFDSOI Unique back bias capability Scalability\nLow drive current per uit area\nHorizontal nanowire Great electrostatics Parasitic capacitance\n‘Nanosheet Good tradeoff between Scalability\nelectrostatics and parasitics\nVertical nanowire Great electrostatics. Unique process challenges\nGood scalability\nGermanium / TI-V Higher carrier mobilities than Si Material defects\nGate stack\nContact resistance\nCNT / 2D semiconductor / Superior electrostatics / carrier Material defects\nGraphene ‘mobilities Gate stack\nContact resistance\n[K. Cheng et al., ECS Transactions 80, 17 (2017)] Compatibility with silicon\nPulse Summer School, Epitaxy Bases & Promises, Porquerolles, 2-8 July 2021 89
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