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ocr_text: Selective Area Growth\n» Selective area growth (SAG) --> local growth of an epitaxial layer on a substrate through\na patterned dielectric mask (typically silicon oxide (SiO) or silicon nitride (SizNs)).\n= 10 - 500 nm thick, covering a part of the substrate surface & leaving a defined Si\nsurface - the “active area” - exposed for the growth of the active layers.\n> Objective: to promote the growth of the layer only IN. Collaert etal, Microelec.Eng.132 (2015) 218]\nin the active area w/o nucleation on the mask fi I\n===) exclusively in a lithography defined area, this fl\nprocess enables alignment for the later device AS\nfabrication. But the growth condition windows are ® ['] -\nreduced to favour the growth rate locally oe 9 [i\n===) depending on the mask dimensions & the 4 i\ndielectric layer nature. ® 1\nde Min []\nCrystalline quality, process selectivity, CJ\nthickness, doping control, faceting need to be\ninvestigated.
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