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created_time: 2025-11-28T16:58:22.774Z
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ocr_text: Hetero-Epitaxial Growth of GaN on Si\n» Lack of GaN native substrates:\n~ limited supply & very expensive (few thousand $)\n===) Growth on Si (less than 100 $ for 200 mm wafer)\n--> large lattice-mismatch & thermal mismatch\nTable 1\nMaterial properties of GaN, AIN, Si, SiC, and sapphire (the given thermal expansion\ncoefficient is an averaged value and might differ significantly at very low and at high\ntemperatures) [7-9, 13-18]\nmaterial a (A) ¢(A) thermal thermal expansion lattice mismatch thermal mismatch\nconductivity coefficient in-plane GaN/substrate ~~ GaN/substrate\nGaN 3189 5185 13 5.59 - -\nAIN 311 498 285 42 24 25\n6H-SIC 3080 15.12 3.0-38 42 33 25\nsapphire 4.758 12.991 0.5 75 16 -34
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