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updated_time: 2025-11-30T12:36:43.344Z
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ocr_text: SiGe channels\n» Utilization of strained materials such as strained Si for n-FET and strained SiGe for p-FET are\ndevelopped as a near-term technological solution.\n» SiGe layers pseudomorphically grown on Si substrates are under biaxial compressive\nstrain. SiGe layers on relaxed SiGe underlying buffers can have either biaxial compressive\nor tensile strain depending on the relative lattice mismatch between the two layers.\n===) Strain plays a role on the band structure and transport properties of SiGe channels\nGate electrode » Fory > x, the buried Si,.,Ge, layer is under\nalo Cove 8 OE biaxial compressive strain.\nAE; si ,Ge, ©» The strained-Si;.,Ge, layer is capped with Si for surface\n0.08 passivation to control the interface traps for SiGe.\n===) The band alignment of strained Si and strained\n= SiGe mostly confines the holes in the buried SiGe &\nSi substrate the electrons in the strained-Si capping layer.\nPFETS. 6.00004-5 Na
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