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ocr_text: Heterogeneous Material Integration on Si Platforms\n» Integrate (onto Si) heterogeneous devices with CMOS transistors\n#vtpoduction of materials with specific properties\n>» Semiconductor materials chosen for Graphene Pm\ntheir specific properties (Eg, p) Pel ET fission\n< e.g. InP, InGaAs, GaAs and GaN developgd‘fir| mixed-signaf™* fa i |,\nanalog RF applications > ! ca J bead E\n[Holes\n01 1 10\nEnergy band gap (eV)\nFIG. 2.8 Comparison of clectronhole carrier mobilities and energy bandgaps of selected sem\nwith switching speeds suitable for fast electronics. Blue box: lowebl, aie Ls deat;\nfor significantly faster than silicon switching, low-voltage operations. aid wide-spectrum optoclec
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