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ocr_text: Band Structure Engineering\n> Heteroepitaxy ===) band structure design\n& engineering for high performance devices Lo ! ! Paral reared ayer\n&= (Asub. = Alay.) / Alay. - |\nm=) :< 0: compressive stress TEE Swstite\n£> 0: tensile stress E EH y\n(pseudomorphic growth) HHH bg 3\nFor h > h. : strain relaxation 1 a\n(creation of defects) 29) io J 7 io\nFIG. 3.3 Theoretical critical thickness A. in function of lattice mismatch f.\nChapter 3 — Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices , Clément Merckling\nHigh Mobility Materials for CMOS Applications. https://doi.org/10.101€ " GE ined
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