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created_time: 2025-11-28T16:58:23.299Z
updated_time: 2025-11-30T12:36:38.539Z
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ocr_text: Hetero-Epitaxial Growth of GaN on Si\n» Main difficulties:\n- the melt-back etching --> reaction between Ga & Si at high temperature\n- high dislocation density --> lattice-mismatch aGaN = 0.318 nm, = 5.59x106K1\n- large stress --> thermal expansion coef. mismatch aSi(111) = 0.384 nm, a = 3.59x10 K-\nlattice-mismatch = 16.9% TEC\nmismatch = 56%\n<S Integration of GaN on silicon --> « manufacturability » (compatibility\nof the wafers with a standard Si production line)\nLow bow, low particule/defect count of the wafers & crack-free surface\n—> Cracking of a GaN/Si structure due to the large\ntensile stress during the cooling process from\ngrowth temperature to room temperature\noriginating from the TEC mismatch ~~
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