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ocr_text: Metal-Oxide semiconductor FET (MOSFET)\n» Basic MOSFET devices used metal as the gate material a rma) J A ea Ea\n(now poly-Si), silicon dioxide as insulator or Dgain\n(gate oxide) and Si as substrate.\n===) The gate switches on and off by the transistor _ SE\nwith an electric field crossing the gate oxide [Ea ==]\n» 3 terminal device : S\nThe Source, Gate, Drain and Body terminals. In general, the body is Body channel\nin connection with the source terminal thus forming a three-terminal\ndevice such as a field-effect transistor.\n» The functionality of MOSFET depends on the electrical variations in the channel along\nwith the flow of carriers (either holes or electrons).\nThe charge carriers enter into the channel through the source and exit via the drain.\n» The N-Channel MOSFET has an N-channel region NMOS we MOS\n» The P- channel MOSFET has a P- Channel region
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