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ocr_text: Beyond the Si Channel\n» Replacement of the Si channel in MOSFET with higher mobility (or injection velocity)\nmaterials.\n===) Research efforts have focused on improving the effective mass (m*)\n<S - strained Si MOSFET technology\n» Beyond the traditional silicon channel materials:\n- Ge-based materials for improving PMOS (low hole mass m*)\n- III-V-based materials for improving NMOS (low electron mass m*)
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