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created_time: 2025-11-28T16:58:22.651Z
updated_time: 2025-11-30T12:37:48.646Z
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ocr_text: Aspect Ratio Trapping\n»Important reduction of the dislocation density within a thin deposited layer thickness\n(few hundreds of nm)\n>The key challenge of this technique resides in the impossibility to trap the (111)-\noriented defects along the parallel direction of the trench.\n“Perpendicular view” “Parallel view”\n(C. Merckling et al.,\nECS Transactions 66, 107 (2015)] 0\nFigure 1. III-V selective area growth on Si(001) in trenches. (a) “Perpendicular view”\npresenting an efficient trapping effect of (111)-oriented defects from the III-V/Si interface.\n(b) “Parallel view” where (111)-oriented defects are not trapped in the direction along Co\nthe trench. HEE
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